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SN74LVC2G00W-EP - DUAL 2-INPUT POSITIVE-NAND GATE

Description

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff.

Features

  • Controlled Baseline.
  • One Assembly/Test Site, One Fabrication Site.
  • Extended Temperature Performance of.
  • 55°C to 115°C.
  • Enhanced Diminishing Manufacturing Sources (DMS) Support.
  • Enhanced Product-Change Notification.
  • Qualification Pedigree (1).
  • Supports 5-V VCC Operation.
  • Inputs Accept Voltages to 5.5 V.
  • Max tpd of 5.3 ns at 3.3 V.
  • Low Power Consumption, 10-µA Max ICC (1) Component qualification in a.

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Full PDF Text Transcription

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www.ti.com FEATURES • Controlled Baseline – One Assembly/Test Site, One Fabrication Site • Extended Temperature Performance of –55°C to 115°C • Enhanced Diminishing Manufacturing Sources (DMS) Support • Enhanced Product-Change Notification • Qualification Pedigree (1) • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-µA Max ICC (1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life.
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