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CSD25213W10 - P-Channel Power MOSFET

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

20 V Qg Gate Charge Total (4.5V) 2.2 nC

Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Small Footprint 1mm × 1mm.
  • Low Profile 0.62mm Height.
  • Pb Free.
  • Gate-Source Voltage Clamp.
  • Gate ESD Protection.
  • RoHS Compliant.
  • Halogen Free.

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Full PDF Text Transcription

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CSD25213W10 www.ti.com P-Channel NexFET™ Power MOSFET Check for Samples: CSD25213W10 SLPS443 – JUNE 2013 FEATURES 1 • Ultra Low Qg and Qgd • Small Footprint 1mm × 1mm • Low Profile 0.62mm Height • Pb Free • Gate-Source Voltage Clamp • Gate ESD Protection • RoHS Compliant • Halogen Free APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View GS RC RG DS PRODUCT SUMMARY VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 2.2 nC Qgd Gate Charge Gate to Drain 0.14 nC RDS(on) Drain to Source On Resistance VGS = –2.5V 54 mΩ VGS = –4.
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