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CSD25301W1015 - P-Channel Power MOSFET

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

20 V Qg Gate Charge Total (4.5V) 1.9 nC

Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Small Footprint.
  • Low Profile 0.62mm Height.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • CSP 1 × 1.5 mm Wafer Level Package.

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Other Datasheets by Texas Instruments

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Full PDF Text Transcription

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CSD25301W1015 www.ti.com SLPS210B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET™ Power MOSFET Check for Samples: CSD25301W1015 FEATURES 1 • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D S S PRODUCT SUMMARY VDS Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 1.9 nC Qgd Gate Charge Gate to Drain 0.4 nC VGS = –1.5V 175 mΩ RDS(on) Drain to Source On Resistance VGS = –2.5V 80 mΩ VGS = –4.
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