Datasheet4U Logo Datasheet4U.com

ZVNL535A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features

  • 350 Volt VDS.
  • RDS(on)=40Ω ZVNL535A D G S E-Line TO92 Compatible.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZVNL120G 200V N-CHANNEL ENHANCEMENT MODE MOSFET Diodes
ZVN0117TA N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ETC
ZVN0120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ETC
ZVN0545G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET DIODES
ZVN2106A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Diodes

Other Datasheets by Zetex (Diodes Incorporated)

Part Number Description
ZVNL110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVNL110G N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVNL120G N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ZVN0124A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=40Ω ZVNL535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 350 90 800 ± 20 700 -55 to +150 UNIT V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Published: |