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ZVNL110G - N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

Features

  • LOW RDS(ON) - 3Ω 7 ZVNL110G D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES * LOW RDS(ON) - 3Ω 7 ZVNL110G D PARTMARKING DETAIL - ZVNL110 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 600 6 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 100 0.75 1.5 100 10 100 750 4.5 3.0 225 75 25 8 7 12 15 13 MAX. UNIT CONDITIONS.
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