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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets
ZVN0117TA
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg
E-Line TO92 Compatible VALUE 170 160 2
± 20
UNIT V mA A V mW °C
700 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. BVDSS IGSS IDSS ID(on) RDS(on) 100 23 23 170 100 10 50 MAX. UNIT CONDITIONS.
ZVN0117TA Datasheet
