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ZVNL120G - N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

Features

  • VDS - 200V.
  • RDS(ON) - 10Ω 7 ZVNL120G D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES * VDS - 200V * RDS(ON) - 10Ω 7 ZVNL120G D PARTMARKING DETAIL - ZVNL120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 0.5 1.5 100 10 100 500 10 10 200 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS.
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