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XP10TN135M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP10TN135M
Manufacturer YAGEO
File Size 245.90 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10TN135M Datasheet

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Other Datasheets by YAGEO

Part Number Description
XP10TN135H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10TN135J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10TN135JB N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10TN135K N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10TN135N N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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XP10TN135M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low Gate Charge ▼ RoHS Compliant & Halogen-Free D D D D SO-8 SG S S Description XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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