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XP10TN135JB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number XP10TN135JB
Manufacturer YAGEO
File Size 142.94 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet XP10TN135JB Datasheet

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Other Datasheets by YAGEO

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XP10TN135J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
XP10TN135H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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XP10TN135JB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 100V 135mΩ 8.
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