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WFF7N65S - 650V Super-Junction Power MOSFET

General Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg =19nC).
  • 100% UIS tested.
  • RoHS compl iant General.

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Datasheet Details

Part number WFF7N65S
Manufacturer Winsemi
File Size 313.18 KB
Description 650V Super-Junction Power MOSFET
Datasheet download datasheet WFF7N65S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WFF7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.