WFF12N70S
Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 28n C)
- 100% UIS tested
- Ro HS pl iant
- Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID I DM
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Drain Current Pulsed 1)
VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃)
PD -Derate above 25℃
TJ Junction Temperature Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature...
