WFF18N50
Description
Silicon N-Channel MOSFET
Features
- 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
- Ultra-low Gate charge(Typical 42n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃) PD
Derating...
