WFF12N65L
Description
Silicon N-Channel MOSFET
Features
- 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
- Ultra-low Gate charge(Typical 40n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Enhanced EMI capability
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-Cell TM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
IDM VGS EAS dv/dt
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above...
