Full PDF Text Transcription for K2611B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2611B. For precise diagrams, and layout, please refer to the original PDF.
Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
K2611B Datasheet
