Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2611. For precise diagrams, and layout, please refer to the original PDF.
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−sourc...
View more extracted text
r, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement−mode : Vth = 2.0 to 4.
K2611 Datasheet
