Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2611. For precise diagrams, and layout, please refer to the original PDF.
Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Ran...
View more extracted text
g Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) K2611 Silicon N-Channel MOSFET General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
K2611 Datasheet
