K2698 - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powe

Key Features

18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
Ultra-low Gate charge(Typical 42nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) K2698 Silicon N-Channel MOSFET General.

📥 Download Datasheet

K2698 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	K2698
Manufacturer	Winsemi
File Size	967.65 KB
Description	Silicon N-Channel MOSFET
Datasheet	K2698 Datasheet

Full PDF Text Transcription for K2698 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2698. For precise diagrams, and layout, please refer to the original PDF.

Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Rang...

View more extracted text

Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) K2698 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	K2698	Silicon N-Channel MOSFET	Toshiba Semiconductor

More Datasheets from Winsemi

Part Number	Description
K2611	Silicon N-Channel MOSFET
K2611B	Silicon N-Channel MOSFET