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WNM4153 - N-Channel MOSFET

General Description

The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion applications.

Standard Product WNM4153 is Pb-free.

Key Features

  • Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523 WNM4153 Http://www. willsemi. com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3F 12 N3 = Device Code F = Month Marking.

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Datasheet Details

Part number WNM4153
Manufacturer Will Semiconductor
File Size 322.05 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM4153 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET VDS (V) 20 RDS(on) (Ω) 0.220 @ VGS=4.5V 0.260 @ VGS=2.5V 0.320 @ VGS=1.8V Descriptions The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WNM4153 is Pb-free. Features Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523 WNM4153 Http://www.willsemi.