WNM4017
Description
The WNM4017 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4017 is in pliance with Ro HS.
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PDFN5X6-8L
Pin configuration (Top view)
Features
- Trench Technology
- Supper high density cell design
- Low ON resistance
- Low Threshold Voltage
- Package PDFN5X6-8L
WLSI 4017 NSYW
Applications
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
WLSI = pany Code 4017 = Device Code NS = Special Code Y = Year W = Week(A~z) Marking
Device
Package
Shipping
WNM4017-8/TR PDFN5X6-8L 5000/Tape&Reel
Order information
Will Semiconductor Ltd.
2023/03/14- Rev.1.1
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Parameter Drain-Source Voltage Gate-Source...
