WNM4017 - 40V 124A N-Channel Power MOSFET

Will Semiconductor

General Description

The WNM4017 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Standard Product WNM4017 is in compliance with RoHS.

Key Features

Trench Technology.
Supper high density cell design.
Low ON resistance.
Low Threshold Voltage.
Package PDFN5X6-8L WLSI 4017 NSYW.

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WNM4017 40v 124a n-channel power mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNM4017
Manufacturer	Will Semiconductor
File Size	628.24 KB
Description	40V 124A N-Channel Power MOSFET
Datasheet	WNM4017 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM4017 Single N-Channel, 40V,124A,Power MOSFET VDS (V) 40 Max.RDS(on) (mΩ) 2.2 @ VGS=10V 3.6@ VGS=4.5V Description The WNM4017 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4017 is in compliance with RoHS. WNM4017 Https://www.omnivision-group.