Datasheet Details
| Part number | WNM07N65 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 1.44 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 WNM07N65 Datasheet
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General Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.
Key Features
- 650V@TJ=25°C.
- Typ. RDS(on)=1.0 Ω.
- Low gate charge.
- 100% avalanche tested.
- 100% Rg tested D GDS TOT-O22- 0 FG S GD S TO-220F WNM07N65 CC Y W =Devices code = Special Code =Year =Week WNM07N65F =Devices code CC = Special Code Y =Year W =Week Order Information Device Package WNM07N65_3/T TO-220 WNM07N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM07N65 WNM07N65F Drain-Source Voltage Gate-S.