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WNM4006 - N-Channel MOSFET

General Description

The WNM4006 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Http//:www. willsemi. com SOT-23 D 3 12 GS Pin configuration (Top view) W46.
  • W46.
  • = Device Code = Month (A~Z).

📥 Download Datasheet

Datasheet Details

Part number WNM4006
Manufacturer Will Semiconductor
File Size 124.69 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM4006 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) 45 Rds(on) (ȍ) 0.126@ VGS=10V 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V Descriptions The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) W46* W46 * = Device Code = Month (A~Z) Applications z Driver for Relay, Solenoid, Motor, LED etc.