VS-GT50TP60N - Half-Bridge IGBT

Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as UPS and SMPS.

Features

Low VCE(on) trench IGBT technology.
5 μs short circuit capability.
VCE(on) with positive temperature coefficient.
Maximum junction temperature 175 °C.
Low inductance case.
Fast and soft reverse recovery antiparallel FWD.
Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Vishay

📥 Download Datasheet

Datasheet Details

Part number	VS-GT50TP60N
Manufacturer	Vishay
File Size	134.83 KB
Description	Half-Bridge IGBT
Datasheet	VS-GT50TP60N Datasheet
Additional preview pages of the VS-GT50TP60N datasheet.

📁 Similar Datasheet

VS-100M - POWER RELAY (Fujitsu)
VS-100S - POWER RELAY (Fujitsu)
VS-12M - POWER RELAY (Fujitsu)
VS-12S - POWER RELAY (Fujitsu)
VS-14M - POWER RELAY (Fujitsu)
VS-14S - POWER RELAY (Fujitsu)
VS-18M - POWER RELAY (Fujitsu)
VS-18S - POWER RELAY (Fujitsu)
VS-18TQ035SPBF - RECTIFIER DIODE (Vishay Intertechnology)
VS-18TQ040SPBF - RECTIFIER DIODE (Vishay Intertechnology)

Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text

www.vishay.com VS-GT50TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A INT-A-PAK FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 50 A, 25 °C 600 V 50 A 1.

Published: Mar 2, 2015 |