VS-GT100TP120N Datasheet PDF (Half Bridge IGBT) | Download Vishay VS-GT100TP120N

VS-GT100TP120N - Half Bridge IGBT

Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

Features

Low VCE(sat) trench IGBT technology.
10 μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175 °C.
Low inductance case.
Fast and soft reverse recovery antiparallel FWD.
Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 .

Datasheet Details

Part number	VS-GT100TP120N
Manufacturer	Vishay
File Size	183.81 KB
Description	Half Bridge IGBT
Datasheet	VS-GT100TP120N Datasheet
Additional preview pages of the VS-GT100TP120N datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-GT100TP120N Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Speed Package Circuit 1200 V 100 A 1.90 V 8 kHz to 30 kHz INT-A-PAK Half bridge FEATURES • Low VCE(sat) trench IGBT technology • 10 μs short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 2, 2015 |