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VS-GT180DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A
SOT-227
PRIMARY CHARACTERISTICS
VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed
1200 V 185 A at 90 °C
1.55 V 32 A at 90 °C 8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch with AP diode
FEATURES • 1200 V trench and field stop technology • Low switching losses • Positive temperature coefficient • Easy paralleling • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse
recovery • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance
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VS-GT180DA120U Datasheet
