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VS-GT100TP60N - Half Bridge IGBT

Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as UPS and SMPS.

Features

  • Low VCE(on) trench IGBT technology.
  • 5 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 175 °C.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (direct copper bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – VS-GT100TP60N

Datasheet Details

Part number VS-GT100TP60N
Manufacturer Vishay
File Size 182.95 KB
Description Half Bridge IGBT
Datasheet download datasheet VS-GT100TP60N Datasheet
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www.vishay.com VS-GT100TP60N Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C Speed 600 V 100 A 1.65 V 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Low VCE(on) trench IGBT technology • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (direct copper bonding) technology • Material categorization: for definitions of compliance please see www.vishay.
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