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VS-GT140DA60U - IGBT

Features

  • Trench IGBT technology with positive temperature coefficient.
  • Square RBSOA.
  • 3 μs short circuit capability.
  • FRED Pt® antiparallel diodes with ultrasoft reverse recovery.
  • TJ maximum = 175 °C.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 BENEF.

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Datasheet Details

Part number VS-GT140DA60U
Manufacturer Vishay
File Size 186.01 KB
Description IGBT
Datasheet download datasheet VS-GT140DA60U Datasheet
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www.vishay.com VS-GT140DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Speed 600 V 140 A at 90 °C 1.72 V 71 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.
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