VS-GT50LA65UF - IGBT

Features

Trench IGBT technology.
Higher switching frequency up to 150 kHz.
Square RBSOA.
Low VCE(on).
FRED Pt® Gen 4 clamping diode.
Fully isolated package.
Very low internal inductance (≤ 5 nH typical).
Industry standard outline.
UL approved file E78996.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	VS-GT50LA65UF
Manufacturer	Vishay
File Size	209.08 KB
Description	IGBT
Datasheet	VS-GT50LA65UF Datasheet
Additional preview pages of the VS-GT50LA65UF datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-GT50LA65UF Vishay Semiconductors “Low Side Chopper” IGBT SOT-227, 650 V, 50 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 50 A, 25 °C IF DC Package 650 V 50 A at 59 °C 1.70 V 50 A at 25 °C SOT-227 Circuit configuration Low side chopper FEATURES • Trench IGBT technology • Higher switching frequency up to 150 kHz • Square RBSOA • Low VCE(on) • FRED Pt® Gen 4 clamping diode • Fully isolated package • Very low internal inductance (≤ 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.

Published: Aug 27, 2023 |