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VS-GT300YH120N
Vishay Semiconductors
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
PRIMARY CHARACTERISTICS
IGBT
VCES
1200 V
VCE(on) (typical) at 300 A, 25 °C
1.93 V
ID(DC) at TC = 80 °C
300 A
HEXFRED® SERIES DIODE
VR 1200 V
VF (typical) at 300 A, 25 °C
1.99 V
IF(DC) at 80 °C
300 A
IGBT AND HEXFRED® SERIES DIODE
VCE(on) + VF typical at 300 A
3.92 V
HEXFRED® ANTIPARALLEL DIODE
VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package
1.
VS-GT300YH120N Datasheet
