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VS-GT300FD060N - DIAP Low Profile 3-Levels Half-Bridge Inverter Stage

Features

  • Trench plus Field Stop IGBT technology.
  • FRED Pt® antiparallel and clamping diodes.
  • Short circuit capability.
  • Speed 4 kHz to 30 kHz.
  • Low stray internal inductances.
  • Low switching loss.
  • UL approved file E78996.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VS-GT300FD060N
Manufacturer Vishay
File Size 364.55 KB
Description DIAP Low Profile 3-Levels Half-Bridge Inverter Stage
Datasheet download datasheet VS-GT300FD060N Datasheet

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Full PDF Text Transcription

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www.vishay.com VS-GT300FD060N Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A PRODUCT SUMMARY VCES VCE(ON) typical at IC = 300 A IC at TC = 25 °C Package Circuit 600 V 1.72 V 379 A DIAP low Profile Three Levels Half Brigde Inverter Stage FEATURES • Trench plus Field Stop IGBT technology • FRED Pt® antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz • Low stray internal inductances • Low switching loss • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.
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