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VS-GT250SA60S - Insulated Gate Bipolar Transistor

Features

  • Standard: optimized for minimum saturation voltage and low speed.
  • Lowest conduction losses available.
  • Fully isolated package (2500 VAC).
  • Very low internal inductance (5 nH typical).
  • Industry standard outline.
  • Designed and qualified for industrial level.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VS-GT250SA60S
Manufacturer Vishay
File Size 191.61 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet VS-GT250SA60S Datasheet
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www.vishay.com VS-GT250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A SOT-227 PRIMARY CHARACTERISTICS VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 90 °C Speed 600 V 1.16 V 250 A DC to 1 kHz Package SOT-227 Circuit configuration Single switch no diode FEATURES • Standard: optimized for minimum saturation voltage and low speed • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.
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