Datasheet4U Logo Datasheet4U.com

VS-C4PU3006L-N3 - Ultrafast Soft Recovery Diode

Description

Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching elem

Features

  • Gen 4 FRED Pt® technology.
  • Low IRRM and reverse recovery charge.
  • Very low forward voltage drop.
  • Polyimide passivated chip for high reliability standard.
  • 175 °C operating junction temperature.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS-100M POWER RELAY Fujitsu
VS-100S POWER RELAY Fujitsu
VS-12M POWER RELAY Fujitsu
VS-12S POWER RELAY Fujitsu
VS-14M POWER RELAY Fujitsu

Other Datasheets by Vishay

Part Number Description
VS-C4PH6006LHN3 Hyperfast Soft Recovery Diode
VS-CPV362M4FPbF IGBT SIP
VS-CPV363M4FPbF IGBT
VS-CPV363M4KPbF IGBT
VS-CPV363M4UPbF IGBT SIP

Full PDF Text Transcription

Click to expand full text
www.vishay.com VS-C4PU3006L-N3 Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 15 A FRED Pt® Gen 4 1 2 3 TO-247AD 3L Base common cathode 2 1 Anode 1 3 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF 2 x 15 A 600 V 1.12 V trr typ. See Recovery table TJ max. Package 175 °C TO-247AD 3L Circuit configuration Common cathode FEATURES • Gen 4 FRED Pt® technology • Low IRRM and reverse recovery charge • Very low forward voltage drop • Polyimide passivated chip for high reliability standard • 175 °C operating junction temperature • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.
Published: |