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VS-C4PH6006LHN3 - Hyperfast Soft Recovery Diode

Description

Gen 4 Fred Pt technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching e

Features

  • Gen 4 FRED Pt® technology.
  • Low IRRM and reverse recovery charge.
  • Very low forward voltage drop.
  • Polyimide passivated chip for high reliability standard.
  • 175 °C operating junction temperature.
  • AEC-Q101 qualified, meets JESD 201 class 1 whisker test.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-C4PH6006LHN3 Vishay Semiconductors Hyperfast Soft Recovery Diode, 2 x 30 A FRED Pt® Gen 4 1 2 3 TO-247AD 3L Base common cathode 2 13 Anode 1 2 Anode 2 Common cathode FEATURES • Gen 4 FRED Pt® technology • Low IRRM and reverse recovery charge • Very low forward voltage drop • Polyimide passivated chip for high reliability standard • 175 °C operating junction temperature • AEC-Q101 qualified, meets JESD 201 class 1 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-247AD 3L 2 x 30 A 600 V 1.
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