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VS-CPV363M4UPbF - IGBT SIP

Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • IMS-2.

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Other Datasheets by Vishay

Part Number Description
VS-CPV363M4FPbF IGBT
VS-CPV363M4KPbF IGBT
VS-CPV362M4FPbF IGBT SIP
VS-CPV364M4FPbF IGBT SIP
VS-CPV364M4KPbF IGBT SIP

Full PDF Text Transcription

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www.vishay.com VS-CPV363M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) FEATURES IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (2.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 7.1 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 6.8 A, 25 °C Speed 1.7 V 8 kHz to 30 kHz Package SIP Circuit configuration Three phase inverter • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs.
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