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VS-CPV364M4FPbF - IGBT SIP

Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Full PDF Text Transcription

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www.vishay.com VS-CPV364M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES IRMS per phase (4.6 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 18 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 15 A, 25 °C Speed 1.35 V 1 kHz to 8 kHz Package SIP Circuit configuration Three phase inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs.
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