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VS-CPV363M4KPbF - IGBT

Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 μs at 125 °C, VGE = 15 V.
  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Other Datasheets by Vishay

Part Number Description
VS-CPV363M4FPbF IGBT
VS-CPV363M4UPbF IGBT SIP
VS-CPV362M4FPbF IGBT SIP
VS-CPV364M4FPbF IGBT SIP
VS-CPV364M4KPbF IGBT SIP

Full PDF Text Transcription

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www.vishay.com VS-CPV363M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (1.94 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 6.7 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) VCE(on) (typical) at IC = 6.0 A, 25 °C Speed 115 % 1.72 V 8 kHz to 30 kHz Package Circuit configuration SIP Three phase inverter FEATURES • Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs.
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