Datasheet4U Logo Datasheet4U.com

VS-CPV364M4UPbF - IGBT SIP

Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS-100M POWER RELAY Fujitsu
VS-100S POWER RELAY Fujitsu
VS-12M POWER RELAY Fujitsu
VS-12S POWER RELAY Fujitsu
VS-14M POWER RELAY Fujitsu

Other Datasheets by Vishay

Part Number Description
VS-CPV364M4FPbF IGBT SIP
VS-CPV364M4KPbF IGBT SIP
VS-CPV362M4FPbF IGBT SIP
VS-CPV363M4FPbF IGBT
VS-CPV363M4KPbF IGBT

Full PDF Text Transcription

Click to expand full text
www.vishay.com VS-CPV364M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (3.5 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 12 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 10 A, 25 °C Speed 1.56 V 8 kHz to 30 kHz Package SIP Circuit configuration Three phase inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for high speed, see fig. 1 for current vs.
Published: |