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New Product
VB40M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VB40M120C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 250 A 0.
VB40M120C Datasheet
