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VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Description

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Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1.
  • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet Details

Part number VB40100C
Manufacturer Vishay
File Size 185.35 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB40100C Datasheet
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Full PDF Text Transcription

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New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
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