VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 V40100C PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

Vishay Siliconix

Datasheet Details

Part number	VB40100C
Manufacturer	Vishay Siliconix
File Size	189.73 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40100C Datasheet
Additional preview pages of the VB40100C datasheet.

📁 Similar Datasheet

VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40100G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40170C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB408 - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408B - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408FI - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)

Other Datasheets by Vishay Siliconix

VB40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text

New Product V40100C, VF40100C, VB40100C & VI40100C www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Published: May 3, 2010 |