Click to expand full text
VB40M120C-E3, VB40M120C-M3, VB40M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB40M120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
2 x 20 A 120 V 250 A 0.64 V 150 °C
TO-263AB
Diode variations
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation • AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: for definitions of compliance please see www.vishay.
VB40M120C-E3 Datasheet
