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VB30M120C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – VB30M120C

Datasheet Details

Part number VB30M120C
Manufacturer Vishay
File Size 100.55 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30M120C Datasheet
Additional preview pages of the VB30M120C datasheet.

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Full PDF Text Transcription

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www.vishay.com VB30M120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
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