VB30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

Vishay

Datasheet Details

Part number	VB30100C
Manufacturer	Vishay
File Size	157.37 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30100C Datasheet
Additional preview pages of the VB30100C datasheet.

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Full PDF Text Transcription

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New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB30100C PIN 1 K PIN 2 HEATSINK VI30100C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 100 V 160 A 0.

Published: Feb 2, 2012 |