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www.vishay.com
VB30100C-M3, VB30100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB30100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM
2 x 15 A 100 V
IFSM
160 A
VF at IF = 15 A TJ max.
Diode variations
0.63 V 150 °C Common cathode
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C • AEC-Q101 qualified available:
- Automotive ordering code P/NHM3 • Material categorization: for definitions of compliance
please see www.vishay.
VB30100CHM3 Datasheet
