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VB30M120C-E3, VB30M120C-M3, VB30M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB30M120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 120 V 150 A 0.68 V 150 °C
TO-263AB
Diode variations
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation • AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: for definitions of compliance please see www.vishay.
VB30M120C-E3 Datasheet
