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SiSS67DN - P-Channel 30V MOSFET

Key Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • 100 % Rg and UIS tested.
  • Very low RDS(on) minimizes power loss from conduction.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS67DN
Manufacturer Vishay
File Size 224.60 KB
Description P-Channel 30V MOSFET
Datasheet download datasheet SiSS67DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiSS67DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -30 0.0055 0.0093 36 -60 a, g Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • 100 % Rg and UIS tested • Very low RDS(on) minimizes power loss from conduction • Material categorization: for definitions of compliance please see www.vishay.