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SiSS65DN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PowerPAK® 1212-8S D
D
D 6
D 7
8
5
3.3 mm
1 Top View
3.3 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration
1
4
3 S
2 S
S
G
Bottom View
-30 0.0046 0.0075
44 -94 a Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• Industry leadership RDS(on) specifications (as of November 2017)
• 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.
SiSS65DN Datasheet
