SiSS64DN - N-Channel 30V MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiSS64DN n-channel 30v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiSS64DN
Manufacturer	Vishay
File Size	269.77 KB
Description	N-Channel 30V MOSFET
Datasheet	SiSS64DN Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SISS27DN-T1-GE3	30V P-Channel MOSFET	Kexin
SIS0100	Black and White Image Sensor Camera Module	Sanyo Semicon Device
SiS1057	JFET Operational Amplifier	Silicon Supplies
SIS2305PLT1G	P-Channel MOSFET	Kexin
SIS23C128	16K x 8 CMOS Mask ROM	Silicon Integrated Systems

Other Datasheets by Vishay

Part Number	Description
SiSS60DN	N-Channel 30V MOSFET
SiSS61DN	P-Channel 20V MOSFET
SiSS63DN	P-Channel 20V MOSFET
SiSS65DN	P-Channel 30V MOSFET
SiSS66DN	N-Channel 30V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com SiSS64DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00210 0.00286 21 40 Single FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.