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SiSS61DN - P-Channel 20V MOSFET

Key Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • Leadership RDS(on) in compact and thermally enhanced package.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS61DN
Manufacturer Vishay
File Size 275.01 KB
Description P-Channel 20V MOSFET
Datasheet download datasheet SiSS61DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiSS61DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -20 0.0035 0.0052 0.0098 86 -111.9 Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • Leadership RDS(on) in compact and thermally enhanced package • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.