SiS890ADN - N-Channel MOSFET

Features

TrenchFET® Gen IV power MOSFET.
Very low RDS x Qg figure-of-merit (FOM).
Tuned for the lowest RDS x Qoss FOM.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiS890ADN
Manufacturer	Vishay
File Size	277.16 KB
Description	N-Channel MOSFET
Datasheet	SiS890ADN Datasheet
Additional preview pages of the SiS890ADN datasheet.

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Full PDF Text Transcription

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www.vishay.com SiS890ADN Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 100 0.0255 0.0290 8.8 24.7 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Dec 25, 2021 |