SIS890DN - N-Channel MOSFET

Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Capable of Operating with 5 V Gate Drive.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SIS890DN
Manufacturer	Vishay
File Size	485.24 KB
Description	N-Channel MOSFET
Datasheet	SIS890DN Datasheet
Additional preview pages of the SIS890DN datasheet.

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Full PDF Text Transcription

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N-Channel 100 V (D-S) MOSFET SiS890DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) 0.0235 at VGS = 10 V 0.0245 at VGS = 7.5 V 0.0315 at VGS = 4.5 V ID (A)f 30g 30g 28.5 Qg (Typ.) 9.5 nC PowerPAK® 1212-8 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiS890DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Capable of Operating with 5 V Gate Drive • Material categorization: For definitions of compliance please see www.vishay.

Published: Feb 10, 2016 |